High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

Kuc A, Cusati T, Dib E, Oliveira AF, Fortunelli A, Iannaccone G, Heine T, Fiori G (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Advanced Electronic Materials Wiley

Book Volume: 3

Article Number: 1600399

Journal Issue: 2

DOI: 10.1002/aelm.201600399

Involved external institutions

Universität Leipzig

Germany (DE) University of Pisa / Università di Pisa (UniPi)

Italy (IT) Institute for the Chemistry of OrganoMetallic Compounds

Italy (IT)

How to cite

APA:

Kuc, A., Cusati, T., Dib, E., Oliveira, A.F., Fortunelli, A., Iannaccone, G.,... Fiori, G. (2017). High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study. Advanced Electronic Materials, 3(2). https://doi.org/10.1002/aelm.201600399

MLA:

Kuc, Agnieszka, et al. "High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study." Advanced Electronic Materials 3.2 (2017).

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