GeP3: A Small Indirect Band Gap 2D Crystal with High Carrier Mobility and Strong Interlayer Quantum Confinement

Jing Y, Ma Y, Li Y, Heine T (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Nano Letters American Chemical Society

Book Volume: 17

Pages Range: 1833-1838

Journal Issue: 3

DOI: 10.1021/acs.nanolett.6b05143

Abstract

We propose a two-dimensional crystal that possesses low indirect band gaps of 0.55 eV (monolayer) and 0.43 eV (bilayer) and high carrier mobilities similar to those of phosphorene, GeP3. GeP3 has a stable three-dimensional layered bulk counterpart, which is metallic and known from experiment since 1970. GeP3 monolayer has a calculated cleavage energy of 1.14 J m-2, which suggests exfoliation of bulk material as viable means for the preparation of mono- and few-layer materials. The material shows strong interlayer quantum confinement effects, resulting in a band gap reduction from mono- to bilayer, and then to a semiconductor-metal transition between bi- and triple layer. Under biaxial strain, the indirect band gap can be turned into a direct one. Pronounced light absorption in the spectral range from ∼600 to 1400 nm is predicted for monolayer and bilayer and promises applications in photovoltaics.

Involved external institutions

Universität Leipzig DE Germany (DE) Nanjing Normal University (NNU) / 南京师范大学 CN China (CN)

How to cite

APA:

Jing, Y., Ma, Y., Li, Y., & Heine, T. (2017). GeP3: A Small Indirect Band Gap 2D Crystal with High Carrier Mobility and Strong Interlayer Quantum Confinement. Nano Letters, 17(3), 1833-1838. https://doi.org/10.1021/acs.nanolett.6b05143

MLA:

Jing, Yu, et al. "GeP3: A Small Indirect Band Gap 2D Crystal with High Carrier Mobility and Strong Interlayer Quantum Confinement." Nano Letters 17.3 (2017): 1833-1838.

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