Isaeva A, Ruck M (2020)
Publication Type: Journal article
Publication year: 2020
Book Volume: 59
Pages Range: 3437-3451
Journal Issue: 6
DOI: 10.1021/acs.inorgchem.9b03461
Bismuth is gaining importance as a key element of functional quantum materials. The effects of spin-orbit coupling (SOC) are at the heart of many exciting proposals for next-generation quantum technologies, including topological materials for efficient information transmission and energy-saving applications. The "heavy" element bismuth and its compounds are predestined for SOC-induced topological properties, but materials design is challenged by a complex link between them and the chemical composition and crystal structure. Nevertheless, a lot can be learned about a certain property by testing its limits with compositional and/or structure modifications. We survey a handful of topological bismuth-based materials that bear structural and chemical semblance to the early topological insulators, antimony-doped elemental bismuth, Bi
APA:
Isaeva, A., & Ruck, M. (2020). Crystal Chemistry and Bonding Patterns of Bismuth-Based Topological Insulators. Inorganic Chemistry, 59(6), 3437-3451. https://doi.org/10.1021/acs.inorgchem.9b03461
MLA:
Isaeva, Anna, and Michael Ruck. "Crystal Chemistry and Bonding Patterns of Bismuth-Based Topological Insulators." Inorganic Chemistry 59.6 (2020): 3437-3451.
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