Electrochemical nanostructuring of (111) oriented GaAs crystals: From porous structures to nanowires

Monaico EI, Monaico EV, Ursaki VV, Honnali S, Postolache V, Leistner K, Nielsch K, Tiginyanu IM (2020)


Publication Type: Journal article

Publication year: 2020

Journal

Book Volume: 11

Pages Range: 966-975

DOI: 10.3762/BJNANO.11.81

Abstract

A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO3 electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 μm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated.

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How to cite

APA:

Monaico, E.I., Monaico, E.V., Ursaki, V.V., Honnali, S., Postolache, V., Leistner, K.,... Tiginyanu, I.M. (2020). Electrochemical nanostructuring of (111) oriented GaAs crystals: From porous structures to nanowires. Beilstein Journal of Nanotechnology, 11, 966-975. https://doi.org/10.3762/BJNANO.11.81

MLA:

Monaico, Elena I., et al. "Electrochemical nanostructuring of (111) oriented GaAs crystals: From porous structures to nanowires." Beilstein Journal of Nanotechnology 11 (2020): 966-975.

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