Tuning of the electronic and phononic properties of NbFeSb half-Heusler compound by Sn/Hf co-doping

Mohamed MAA, Ibrahim EMM, Rodriguez NP, Hampel S, Buechner B, Schierning G, Nielsch K, He R (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Acta Materialia Elsevier

Book Volume: 196

Pages Range: 669-676

DOI: 10.1016/j.actamat.2020.07.028

Abstract

Pure phase NbFeSb1-xSnx (where x = 0, 0.04, 0.08, 0.12, 0.16) half-Heusler samples were prepared by direct mechanical alloying followed by spark plasma sintering. The results showed that the substitution of Sb by Sn can effectively enhance the peak figure of merit (ZT) to 0.55 at 923 K in NbFeSb0.88Sn0.12 through optimized carrier concentration. To further reduce the lattice thermal conductivity (κL), we substituted Nb by Hf to enhance the point defect scattering of phonon transport. A maximum reduction of ~80% in κL was observed in Nb0.8Hf0.2FeSb0.88Sn0.12 when compared to undoped NbFeSb at 573 K. We realized a minimum κL of ~2.96 W m⁻¹ K⁻¹ at 673 K and a peak ZT of ~0.82 at 973 K for Nb0.88Hf0.12FeSb0.88Sn0.12.

Involved external institutions

Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW) / Leibniz Institute for Solid State and Materials Research Dresden

Germany (DE) Sohag-University

Egypt (EG)

How to cite

APA:

Mohamed, M.A.A., Ibrahim, E.M.M., Rodriguez, N.P., Hampel, S., Buechner, B., Schierning, G.,... He, R. (2020). Tuning of the electronic and phononic properties of NbFeSb half-Heusler compound by Sn/Hf co-doping. Acta Materialia, 196, 669-676. https://doi.org/10.1016/j.actamat.2020.07.028

MLA:

Mohamed, M. A. . A. ., et al. "Tuning of the electronic and phononic properties of NbFeSb half-Heusler compound by Sn/Hf co-doping." Acta Materialia 196 (2020): 669-676.

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