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Stress and microstructure evolution in Mo thin films without or with cover layers during thermal-cycling

Park E, Seifert M, Rane GK, Menzel SB, Gemming T, Nielsch K (2020)

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Publication Type: Journal article

Publication year: 2020

Journal

Book Volume: 13

Article Number: 3926

Journal Issue: 18

DOI: 10.3390/MA13183926

Abstract

The intrinsic stress behavior and microstructure evolution of Molybdenum thin films were investigated to evaluate their applicability as a metallization in high temperature microelectronic devices. For this purpose, 100 nm thick Mo films were sputter-deposited without or with an AlN or SiO2 cover layer on thermally oxidized Si substrates. The samples were subjected to thermal cycling up to 900 °C in ultrahigh vacuum; meanwhile, the in-situ stress behavior was monitored by a laser based Multi-beam Optical Sensor (MOS) system. After preannealing at 900 °C for 24 h, the uncovered films showed a high residual stress at room temperature and a plastic behavior at high temperatures, while the covered Mo films showed an almost entirely elastic deformation during the thermal cycling between room temperature and 900 °C with hardly any plastic deformation, and a constant stress value during isothermal annealing without a notable creep. Furthermore, after thermal cycling, the Mo films without as well as with a cover layer showed low electrical resistivity (≤10 μω·cm).

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How to cite

APA:

Park, E., Seifert, M., Rane, G.K., Menzel, S.B., Gemming, T., & Nielsch, K. (2020). Stress and microstructure evolution in Mo thin films without or with cover layers during thermal-cycling. Materials, 13(18). https://doi.org/10.3390/MA13183926

MLA:

Park, Eunmi, et al. "Stress and microstructure evolution in Mo thin films without or with cover layers during thermal-cycling." Materials 13.18 (2020).

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