2D Transition Metal Dichalcogenide Thin Films Obtained by Chemical Gas Phase Deposition Techniques
Park GH, Nielsch K, Thomas A (2019)
Publication Type: Journal article, Review article
Publication year: 2019
Journal
Book Volume: 6
Article Number: 1800688
Journal Issue: 3
Abstract
Ultrathin 2D transition metal dichalcogenide (TMD) thin films have attracted much attention due to their very good electrical, optical, and electrochemical properties. Chemical vapor deposition (CVD) and atomic layer deposition (ALD), which is in some regards an enhanced version of CVD, are techniques that can provide exceptionally conformal large-area coatings, even for complex surface geometries. Besides, these techniques include the transport of one or more precursor chemicals in the gas phase onto a substrate. Subsequently, a chemical reaction occurs, resulting in the deposition of a film of a solid material on the substrate. One of the advantageous aspects of chemical deposition methods, such as CVD and ALD, is the growth of thin films onto a variety of substrates as well as 3D structures. Because of their chemical approach, these techniques are well suited to synthesizing 2D materials (2DMs) with a low defect concentration. Furthermore, the scalability would allow industrial application, as opposed to, e.g., micromechanical cleavage. Here, the recent progress in 2D TMD thin films is reviewed and the current applications of these materials fabricated by CVD and ALD are surveyed.
Involved external institutions
Germany (DE)How to cite
APA:
Park, G.-H., Nielsch, K., & Thomas, A. (2019). 2D Transition Metal Dichalcogenide Thin Films Obtained by Chemical Gas Phase Deposition Techniques. Advanced Materials Interfaces, 6(3). https://doi.org/10.1002/admi.201800688
MLA:
Park, Gyu-Hyeon, Kornelius Nielsch, and Andy Thomas. "2D Transition Metal Dichalcogenide Thin Films Obtained by Chemical Gas Phase Deposition Techniques." Advanced Materials Interfaces 6.3 (2019).
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