Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half-Cycles

Wiegand CW, Zierold R, Faust R, Pohl D, Thomas A, Rellinghaus B, Nielsch K (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Advanced Materials Interfaces WILEY-VCH Verlag GmbH & Co. KGaA

Book Volume: 5

Article Number: 1701155

Journal Issue: 5

DOI: 10.1002/admi.201701155

Abstract

The behaviors of tellurium and selenium atomic layer deposition vapor precursors, namely, Te(SiEt3)2 and Se(SiEt3)2, exposed to different V–VI semiconductor surfaces are reported. The interactions of the precursors with the substrates are monitored in situ with a quartz crystal microbalance (QCM) setup. Specifically, both the utilized metal–organic precursors interact with chalcogenide surfaces but differ in their reaction behaviors. Indeed, exchanged Te diffuses into the selenium-containing substrate, whereas Se only exchanges with the top surface of the substrate. Transmission electron micrsocopy (TEM) and energy-dispersive X-ray spectroscopy (EDX/EDXS) analysis of the topological insulating nanowires reveals the single precursor interactions, which support the QCM data analysis, and provides insight into the morphological and crystalline structures of the altered substrates.

Involved external institutions

Universität Hamburg (UHH) DE Germany (DE) Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW) / Leibniz Institute for Solid State and Materials Research Dresden DE Germany (DE)

How to cite

APA:

Wiegand, C.W., Zierold, R., Faust, R., Pohl, D., Thomas, A., Rellinghaus, B., & Nielsch, K. (2018). Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half-Cycles. Advanced Materials Interfaces, 5(5). https://doi.org/10.1002/admi.201701155

MLA:

Wiegand, Christoph W., et al. "Surface Modification of V–VI Semiconductors Using Exchange Reactions within ALD Half-Cycles." Advanced Materials Interfaces 5.5 (2018).

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