Thickness and temperature dependent thermoelectric properties of Bi87Sb13 nanofilms measured with a novel measurement platform

Linseis , Voelklein F, Reith H, Huehne R, Schnatmann L, Nielsch K, Woias P (2018)


Publication Type: Journal article

Publication year: 2018

Journal

Book Volume: 33

Article Number: 085014

Journal Issue: 8

DOI: 10.1088/1361-6641/aacf39

Abstract

The temperature and thickness dependent thermoelectric properties of Bi87Sb13 nano-films with a thickness from 84 nm to 282 nm have been studied in a temperature range from 110 K up to 450 K. The films have been prepared by thermal evaporation of the raw material from an Al2O3 coated tungsten boat under vacuum conditions of at least 10-6 mbar. The measurements have been performed using a novel measurement platform, which allows the nearly simultaneous characterization of the thermal conductivity, electrical conductivity, the Seebeck coefficient and the Hall coefficient. All properties are measured in the in-plane direction at the same sample within one measurement run, avoiding many sources of uncertainties and allowing the calculation of the direction dependent, in-plane thermoelectric figure of Merit ZT with high precision. The maximum ZT value of 0.28 has been obtained for the thickest sample at a temperature of 265 K. All comparative measurements have been performed after an initial thermal annealing step, as the heat treatment shows a strong impact on the thermoelectric performance of the films.

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How to cite

APA:

Linseis, ., Voelklein, F., Reith, H., Huehne, R., Schnatmann, L., Nielsch, K., & Woias, P. (2018). Thickness and temperature dependent thermoelectric properties of Bi87Sb13 nanofilms measured with a novel measurement platform. Semiconductor Science and Technology, 33(8). https://doi.org/10.1088/1361-6641/aacf39

MLA:

Linseis, , et al. "Thickness and temperature dependent thermoelectric properties of Bi87Sb13 nanofilms measured with a novel measurement platform." Semiconductor Science and Technology 33.8 (2018).

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