Improved thermoelectric performance of n-type half-Heusler MCo1-xNixSb (M = Hf, Zr)

He R, Zhu H, Sun J, Mao J, Reith H, Chen S, Schierning G, Nielsch K, Ren Z (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Materials Today Physics Elsevier

Book Volume: 1

Pages Range: 24-30

DOI: 10.1016/j.mtphys.2017.05.002

Abstract

The MCoSb-based (M = Hf, Zr) half-Heusler compounds were recognized as a promising p-type thermoelectric (TE) material for more than 2 decades although the base compound is intrinsically n-type. Here we investigate the TE properties of Ni-substituted n-type MCoSb. The anomalous changes of carrier concentration and lattice thermal conductivity with higher amount of Ni indicate the presence of atomic disorder. Peak power factor of ∼33 μW cm−1 K−2 and peak ZT of 0.6 are obtained in ZrCo0.9Ni0.1Sb. Further substitute Zr by Hf suppresses the lattice thermal conductivity and yields a peak ZT exceeding 1 in the composition Zr0.5Hf0.5Co0.9Ni0.1Sb at 1073 K. Thus the MCoSb compounds possess promising TE properties by both n- and p-type doping, which is unique among the half-Heusler based TE materials.

Involved external institutions

University of Houston US United States (USA) (US) Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW) / Leibniz Institute for Solid State and Materials Research Dresden DE Germany (DE)

How to cite

APA:

He, R., Zhu, H., Sun, J., Mao, J., Reith, H., Chen, S.,... Ren, Z. (2017). Improved thermoelectric performance of n-type half-Heusler MCo1-xNixSb (M = Hf, Zr). Materials Today Physics, 1, 24-30. https://doi.org/10.1016/j.mtphys.2017.05.002

MLA:

He, Ran, et al. "Improved thermoelectric performance of n-type half-Heusler MCo1-xNixSb (M = Hf, Zr)." Materials Today Physics 1 (2017): 24-30.

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