Low-Temperature Mullite Formation in Ternary Oxide Coatings Deposited by ALD for High-Temperature Applications

Furlan KP, Krekeler T, Ritter M, Blick R, Schneider GA, Nielsch K, Zierold R, Janssen R (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Advanced Materials Interfaces WILEY-VCH Verlag GmbH & Co. KGaA

Book Volume: 4

Article Number: 1700912

Journal Issue: 23

DOI: 10.1002/admi.201700912

Abstract

Atomic layer deposition (ALD) process presents thickness control in an Ångstrom scale due to its inherent surface self-limited reactions. In this work, an ALD super cycle approach, where a superposition of nanolaminates of SiO2 and Al2O3 is generated by cycling the precursors APTES–H2O–O3 and TMA–H2O, is used to deposit thin films with varying ratio of Al2O3:SiO2 into silicon wafers and into inverse photonic crystals. The resulting ternary oxide films deposited at low temperature (150 °C) are amorphous. However, conversion to mullite occurs at 1000 °C, way below the conversion temperatures found into powder processing or diphasic sol–gel routes (type II) and comparable to monophasic sol–gel synthesis. By means of such a mullite coating, the structural stability of an Al2O3 inverse photonic crystal is increased up to 1400 °C.

Involved external institutions

Technische Universität Hamburg-Harburg (TUHH) DE Germany (DE) Universität Hamburg (UHH) DE Germany (DE)

How to cite

APA:

Furlan, K.P., Krekeler, T., Ritter, M., Blick, R., Schneider, G.A., Nielsch, K.,... Janssen, R. (2017). Low-Temperature Mullite Formation in Ternary Oxide Coatings Deposited by ALD for High-Temperature Applications. Advanced Materials Interfaces, 4(23). https://doi.org/10.1002/admi.201700912

MLA:

Furlan, Kaline P., et al. "Low-Temperature Mullite Formation in Ternary Oxide Coatings Deposited by ALD for High-Temperature Applications." Advanced Materials Interfaces 4.23 (2017).

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