Quasi-quantized Hall response in bulk InAs
Wawrzynczak R, Galeski S, Noky J, Sun Y, Felser C, Gooth J (2022)
Publication Type: Journal article
Publication year: 2022
Journal
Book Volume: 12
Article Number: 2153
Journal Issue: 1
DOI: 10.1038/s41598-022-05916-2
Abstract
The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect (QHE), exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials, consisting of stacks of weakly coupled 2D platelets that are yet characterized by a 3D anisotropic Fermi surface. However, it is predicted that the quasi-quantized 3D version of the 2D QHE should occur in a much broader class of bulk materials, regardless of the underlying crystal structure. Here, we compare the observation of quasi-quantized plateau-like features in the Hall conductivity of the n-type bulk semiconductor InAs with the predictions for the 3D QQHE in presence of parabolic electron bands. InAs takes form of a cubic crystal without any low-dimensional substructure. The onset of the plateau-like feature in the Hall conductivity scales with 2/3kFz/π in units of the conductance quantum and is accompanied by a Shubnikov–de Haas minimum in the longitudinal resistivity, consistent wit the results of calculations. This confirms the suggestion that the 3D QQHE may be a generic effect directly observable in materials with small Fermi surfaces, placed in sufficiently strong magnetic fields.
Involved external institutions
Germany (DE)How to cite
APA:
Wawrzynczak, R., Galeski, S., Noky, J., Sun, Y., Felser, C., & Gooth, J. (2022). Quasi-quantized Hall response in bulk InAs. Scientific Reports, 12(1). https://doi.org/10.1038/s41598-022-05916-2
MLA:
Wawrzynczak, Rafal, et al. "Quasi-quantized Hall response in bulk InAs." Scientific Reports 12.1 (2022).
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