Effect of uniaxial stress on the electronic band structure of NbP

Schindler C, Noky J, Schmidt M, Felser C, Wosnitza J, Gooth J (2020)


Publication Type: Journal article

Publication year: 2020

Journal

Book Volume: 102

Article Number: 035132

Journal Issue: 3

DOI: 10.1103/PhysRevB.102.035132

Abstract

The Weyl semimetal NbP exhibits a very small Fermi surface consisting of two electron and two hole pockets, whose fourfold degeneracy in k space is tied to the rotational symmetry of the underlying tetragonal crystal lattice. By applying uniaxial stress, the crystal symmetry can be reduced, which successively leads to a degeneracy lifting of the Fermi-surface pockets. This is reflected by a splitting of the Shubnikov-de Haas frequencies when the magnetic field is aligned along the c axis of the tetragonal lattice. In this study, we present the measurement of Shubnikov-de Haas oscillations of single-crystalline NbP samples under uniaxial tension, combined with state-of-the-art calculations of the electronic band structure. Our results show qualitative agreement between calculated and experimentally determined Shubnikov-de Haas frequencies, demonstrating the robustness of the band-structure calculations upon introducing strain. Furthermore, we predict a significant shift of the Weyl points with increasing uniaxial tension, allowing for an effective tuning to the Fermi level at only 0.8% of strain along the a axis.

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How to cite

APA:

Schindler, C., Noky, J., Schmidt, M., Felser, C., Wosnitza, J., & Gooth, J. (2020). Effect of uniaxial stress on the electronic band structure of NbP. Physical Review B, 102(3). https://doi.org/10.1103/PhysRevB.102.035132

MLA:

Schindler, Clemens, et al. "Effect of uniaxial stress on the electronic band structure of NbP." Physical Review B 102.3 (2020).

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