Taylor JM, Lesne E, Markou A, Dejene FK, Ernst B, Kalache A, Rana KG, Kumar N, Werner P, Felser C, Parkin SSP (2019)
Publication Type: Journal article
Publication year: 2019
Book Volume: 3
Article Number: 074409
Journal Issue: 7
DOI: 10.1103/PhysRevMaterials.3.074409
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the noncollinear antiferromagnet Mn3Ir. Using epitaxial engineering on MgO (001) and Al2O3 (0001) single-crystal substrates, we control the growth of cubic γ-Mn3Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 0.115ergcm-2 or 11.5nJcm-2) measured in Mn3Ir (111)/Permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn3Ir (001)/Permalloy bilayers is observed. These findings are discussed in the context of antiferromagnetic domain structures, and will inform progress towards chiral antiferromagnetic spintronic devices.
APA:
Taylor, J.M., Lesne, E., Markou, A., Dejene, F.K., Ernst, B., Kalache, A.,... Parkin, S.S.P. (2019). Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic M n3Ir thin films. Physical Review Materials, 3(7). https://doi.org/10.1103/PhysRevMaterials.3.074409
MLA:
Taylor, James M., et al. "Epitaxial growth, structural characterization, and exchange bias of noncollinear antiferromagnetic M n3Ir thin films." Physical Review Materials 3.7 (2019).
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