Fang A, Adamo C, Jia S, Cava RJ, Wu SC, Felser C, Kapitulnik A (2018)
Publication Type: Journal article
Publication year: 2018
Book Volume: 4
Article Number: eaaq0330
Journal Issue: 4
Bismuth, one of the heaviest semimetals in nature, ignited the interest of the materials physics community for its potential impact on topological quantummaterial systems that use its strong spin-orbit coupling and unique orbital hybridization. In particular, recent theoretical predictions of unique topological and superconducting properties of thin bismuth films and interfaces prompted intense research on the growth of submonolayers to a few monolayers of bismuth on different substrates. Similar to bulk rhombohedral bismuth, the initial growth of bismuth films on most substrates results in buckled bilayers that grow in either the (111) or (110) directions, with a lattice constant close to that of bulk Bi. By contrast, we show a new growth pattern for bismuth monolayers on NbSe
APA:
Fang, A., Adamo, C., Jia, S., Cava, R.J., Wu, S.-C., Felser, C., & Kapitulnik, A. (2018). Bursting at the seams: Rippled monolayer bismuth on NbSe2. Science Advances, 4(4). https://doi.org/10.1126/sciadv.aaq0330
MLA:
Fang, Alan, et al. "Bursting at the seams: Rippled monolayer bismuth on NbSe2." Science Advances 4.4 (2018).
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