Noncollinear antiferromagnetic Mn3Sn films

Markou A, Taylor JM, Kalache A, Werner P, Parkin SSP, Felser C (2018)


Publication Type: Journal article

Publication year: 2018

Journal

Book Volume: 2

Article Number: 051001

Journal Issue: 5

DOI: 10.1103/PhysRevMaterials.2.051001

Abstract

Noncollinear hexagonal antiferromagnets with almost zero net magnetization were recently shown to demonstrate giant anomalous Hall effect. Here, we present the structural and magnetic properties of noncollinear antiferromagnetic Mn3Sn thin films heteroepitaxially grown on Y:ZrO2 (111) substrates with a Ru underlayer. The Mn3Sn films were crystallized in the hexagonal D019 structure with c-axis preferred (0001) crystal orientation. The Mn3Sn films are discontinuous, forming large islands of approximately 400 nm in width, but are chemical homogeneous and characterized by near perfect heteroepitaxy. Furthermore, the thin films show weak ferromagnetism with an in-plane uncompensated magnetization of M=34 kA/m and coercivity of μ0Hc=4.0 mT at room temperature. Additionally, the exchange bias effect was studied in Mn3Sn/Py bilayers. Exchange bias fields up to μ0HEB=12.6 mT can be achieved at 5 K. These results show Mn3Sn films to be an attractive material for applications in antiferromagnetic spintronics.

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How to cite

APA:

Markou, A., Taylor, J.M., Kalache, A., Werner, P., Parkin, S.S.P., & Felser, C. (2018). Noncollinear antiferromagnetic Mn3Sn films. Physical Review Materials, 2(5). https://doi.org/10.1103/PhysRevMaterials.2.051001

MLA:

Markou, Anastasios, et al. "Noncollinear antiferromagnetic Mn3Sn films." Physical Review Materials 2.5 (2018).

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