Planar Hall effect in the Weyl semimetal GdPtBi

Kumar N, Guin SN, Felser C, Shekhar C (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Physical Review B American Physical Society

Book Volume: 98

Article Number: 041103

Journal Issue: 4

DOI: 10.1103/PhysRevB.98.041103

Abstract

The recent discovery of Weyl and Dirac semimetals is one of the most important progresses in condensed matter physics. Among the very few available tools to characterize Weyl semimetals through electrical transport, negative magnetoresistance is most commonly used. Considering the shortcomings of this method, new tools to characterize the chiral anomaly in Weyl semimetals are desirable. We employ the planar Hall effect (PHE) as an effective technique in the half Heusler Weyl semimetal GdPtBi to study the chiral anomaly. This compound exhibits a large value of 1.5 mΩcm planar Hall resistivity at 2 K and in 9 T. Our analysis reveals that the observed amplitude is dominated by Berry curvature and chiral anomaly contributions. Through angle-dependent transport studies we establish that GdPtBi with relatively small orbital magnetoresistance is an ideal candidate to observe the large PHE.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE)

How to cite

APA:

Kumar, N., Guin, S.N., Felser, C., & Shekhar, C. (2018). Planar Hall effect in the Weyl semimetal GdPtBi. Physical Review B, 98(4). https://doi.org/10.1103/PhysRevB.98.041103

MLA:

Kumar, Nitesh, et al. "Planar Hall effect in the Weyl semimetal GdPtBi." Physical Review B 98.4 (2018).

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