Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

Sankar R, Rao GN, Muthuselvam IP, Butler C, Kumar N, Murugan GS, Shekhar C, Chang TR, Wen CY, Chen CW, Lee WL, Lin MT, Jeng HT, Felser C, Chou FC (2017)


Publication Type: Journal article

Publication year: 2017

Journal

Book Volume: 29

Pages Range: 699-707

Journal Issue: 2

DOI: 10.1021/acs.chemmater.6b04363

Abstract

Large size (∼2 cm) single crystals of layered MoTe2 in both 2H- and 1T′-types were synthsized using TeBr4 as the source of Br2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ(T), magnetic susceptibility χ(T), and heat capacity Cp(T) measurement results reveal a first order structural phase transition near ∼240 K for 1T′-MoTe2, which has been identified to be the orthorhombic Td-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively.

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How to cite

APA:

Sankar, R., Rao, G.N., Muthuselvam, I.P., Butler, C., Kumar, N., Murugan, G.S.,... Chou, F.C. (2017). Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal. Chemistry of Materials, 29(2), 699-707. https://doi.org/10.1021/acs.chemmater.6b04363

MLA:

Sankar, Raman, et al. "Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal." Chemistry of Materials 29.2 (2017): 699-707.

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