Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride

Kumar N, Shekhar C, Wang M, Chen Y, Borrmann H, Felser C (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Physical Review B American Physical Society

Book Volume: 95

Article Number: 155128

Journal Issue: 15

DOI: 10.1103/PhysRevB.95.155128

Abstract

The prediction of the quantum spin Hall effect in two-dimensional ZrTe5 and HfTe5 monolayers has generated considerable recent interest in these materials. In addition, Dirac points and chiral-anomaly-induced negative longitudinal magnetoresistance (MR) have been observed in ZrTe5. Herein, we study the transport behavior of HfTe5 single crystals in detail and find a large (0.9×104%) out-of-plane transverse MR, which is among the highest for layered materials reported thus far. We also encounter a large linear in-plane transverse (magnetic field c, current a) MR and discuss its possible origin. The mass anisotropy (γ=5.4 at 125 K) obtained by scaling angle-dependent MR data is consistent with the HfTe5 elliptical Fermi surface.

Involved external institutions

Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS) / Max Planck Institute for Chemical Physics of Solids DE Germany (DE) ShanghaiTech University / 上海科技大学 CN China (CN)

How to cite

APA:

Kumar, N., Shekhar, C., Wang, M., Chen, Y., Borrmann, H., & Felser, C. (2017). Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride. Physical Review B, 95(15). https://doi.org/10.1103/PhysRevB.95.155128

MLA:

Kumar, Nitesh, et al. "Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride." Physical Review B 95.15 (2017).

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