Qi Y, Shi W, Naumov PG, Kumar N, Sankar R, Schnelle W, Shekhar C, Chou FC, Felser C, Yan B, Medvedev SA (2017)
Publication Type: Journal article
Publication year: 2017
Book Volume: 29
Article Number: 1605965
Journal Issue: 18
A pressure-induced topological quantum phase transition has been theoretically predicted for the semiconductor bismuth tellurohalide BiTeI with giant Rashba spin splitting. In this work, evolution of the electrical transport properties in BiTeI and BiTeBr is investigated under high pressure. The pressure-dependent resistivity in a wide temperature range passes through a minimum at around 3 GPa, indicating the predicted topological quantum phase transition in BiTeI. Superconductivity is observed in both BiTeI and BiTeBr, while resistivity at higher temperatures still exhibits semiconducting behavior. Theoretical calculations suggest that superconductivity may develop from the multivalley semiconductor phase. The superconducting transition temperature, T
APA:
Qi, Y., Shi, W., Naumov, P.G., Kumar, N., Sankar, R., Schnelle, W.,... Medvedev, S.A. (2017). Topological Quantum Phase Transition and Superconductivity Induced by Pressure in the Bismuth Tellurohalide BiTeI. Advanced Materials, 29(18). https://doi.org/10.1002/adma.201605965
MLA:
Qi, Yanpeng, et al. "Topological Quantum Phase Transition and Superconductivity Induced by Pressure in the Bismuth Tellurohalide BiTeI." Advanced Materials 29.18 (2017).
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