Improved thermoelectric properties of TiNiSn through enhancing strain field fluctuation
Lkhagvasuren E, Fu C, Fecher GH, Auffermann G, Kreiner G, Schnelle W, Felser C (2017)
Publication Type: Journal article
Publication year: 2017
Journal
Book Volume: 50
Article Number: 425502
Journal Issue: 42
Abstract
MNiSn (M = Hf, Zr, Ti) -based half Heusler compounds have attracted extensive attention as promising materials in thermoelectric power generation. In this work, the thermoelectric properties of the cheapest composition TiNiSn from this system are investigated. Isoelectronic substitutions of Si and Ge on Sn site are employed to reduce the lattice thermal conductivity. It is found that Si substitution leads to simultaneously enhanced mass and strain field fluctuations in TiNiSn, while the strain field fluctuation dominates the decrease of thermal conductivity in Ge substituted TiNiSn. A maximum ZT of 0.48 at 740 K is obtained in , which is a 23% increase compared to TiNiSn. This result highlights the role of strain field fluctuation in suppressing lattice thermal conductivity and improving the thermoelectric performance of half-Heusler compounds.
Involved external institutions
Germany (DE)How to cite
APA:
Lkhagvasuren, E., Fu, C., Fecher, G.H., Auffermann, G., Kreiner, G., Schnelle, W., & Felser, C. (2017). Improved thermoelectric properties of TiNiSn through enhancing strain field fluctuation. Journal of Physics D: Applied Physics, 50(42). https://doi.org/10.1088/1361-6463/aa85bb
MLA:
Lkhagvasuren, Enkhtaivan, et al. "Improved thermoelectric properties of TiNiSn through enhancing strain field fluctuation." Journal of Physics D: Applied Physics 50.42 (2017).
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