Pregl S, Baraban L, Sessi V, Mikolajick T, Weber WM, Cuniberti G (2018)
Publication Type: Journal article
Publication year: 2018
Book Volume: 18
Pages Range: 967-975
Article Number: 8121982
Journal Issue: 3
DOI: 10.1109/JSEN.2017.2778188
Parallel arrays of silicon nanowire transistors are novel types of transducers under study for chemical and biochemical sensing that exploit the high surface-to-volume ratio of nanowires for sampling of low analyte concentrations and yet provide high output conductance. To investigate the applicability and practical sensitivity of parallel nanowire sensor devices, here, we study their signal-to-noise behavior. Parallel arrays of nominally un-doped Si-nanowires with intruded Ni silicide contacts were characterized by capacitance-voltage, current-voltage, and noise measurements. The power spectral density (PSD) shows a high noise level, which is strongly gate-voltage-dependent. The normalized PSD decreases with the square root of the amount of channel charge, which indicates that the 1/f -noise is uncorrelated. Therefore, Hooge's model can be applied, and α
APA:
Pregl, S., Baraban, L., Sessi, V., Mikolajick, T., Weber, W.M., & Cuniberti, G. (2018). Signal and Noise of Schottky-Junction Parallel Silicon Nanowire Transducers for Biochemical Sensing. IEEE Sensors Journal, 18(3), 967-975. https://doi.org/10.1109/JSEN.2017.2778188
MLA:
Pregl, Sebastian, et al. "Signal and Noise of Schottky-Junction Parallel Silicon Nanowire Transducers for Biochemical Sensing." IEEE Sensors Journal 18.3 (2018): 967-975.
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