Gaul C, Hutsch S, Schwarze M, Schellhammer KS, Bussolotti F, Kera S, Cuniberti G, Leo K, Ortmann F (2018)
Publication Type: Journal article
Publication year: 2018
Book Volume: 17
Pages Range: 439-444
Journal Issue: 5
DOI: 10.1038/s41563-018-0030-8
Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects that are currently not well understood. Here, we simulate and experimentally measure, with direct and inverse photoemission spectroscopy, the density of states and the Fermi level position of the prototypical materials C
APA:
Gaul, C., Hutsch, S., Schwarze, M., Schellhammer, K.S., Bussolotti, F., Kera, S.,... Ortmann, F. (2018). Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped. Nature Materials, 17(5), 439-444. https://doi.org/10.1038/s41563-018-0030-8
MLA:
Gaul, Christopher, et al. "Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped." Nature Materials 17.5 (2018): 439-444.
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