Hexacene generated on passivated silicon

Eisenhut F, Krueger J, Skidin D, Nikipar S, Alonso JM, Guitian E, Perez D, Ryndyk DA, Pena D, Moresco F, Cuniberti G (2018)

Publication Type: Journal article

Publication year: 2018

Journal

Nanoscale Royal Society of Chemistry

Book Volume: 10

Pages Range: 12582-12587

Journal Issue: 26

DOI: 10.1039/c8nr03422b

Abstract

On-surface synthesis represents a successful strategy to obtain designed molecular structures on an ultra-clean metal substrate. While metal surfaces are known to favor adsorption, diffusion, and chemical bonding between molecular groups, on-surface synthesis on non-metallic substrates would allow the electrical decoupling of the resulting molecule from the surface, favoring application to electronics and spintronics. Here, we demonstrate the on-surface generation of hexacene by surface-assisted reduction on a H-passivated Si(001) surface. The reaction, observed by scanning tunneling microscopy and spectroscopy, is probably driven by the formation of Si-O complexes at dangling bond defects. Supported by density functional theory calculations, we investigate the interaction of hexacene with the passivated silicon surface, and with single silicon dangling bonds.

Involved external institutions

Technische Universität Dresden DE Germany (DE) Universidade de Santiago Compostela (USC) ES Spain (ES)

How to cite

APA:

Eisenhut, F., Krueger, J., Skidin, D., Nikipar, S., Alonso, J.M., Guitian, E.,... Cuniberti, G. (2018). Hexacene generated on passivated silicon. Nanoscale, 10(26), 12582-12587. https://doi.org/10.1039/c8nr03422b

MLA:

Eisenhut, Frank, et al. "Hexacene generated on passivated silicon." Nanoscale 10.26 (2018): 12582-12587.

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