Sandonas LM, Gutierrez R, Pecchia A, Seifert G, Cuniberti G (2017)
Publication Type: Journal article
Publication year: 2017
Book Volume: 19
Pages Range: 1487-1495
Journal Issue: 2
DOI: 10.1039/c6cp06621f
Novel two-dimensional (2D) materials show unusual physical properties which combined with strain engineering open up the possibility of new potential device applications in nanoelectronics. In particular, transport properties have been found to be very sensitive to applied strain. In the present work, using a density-functional based tight-binding (DFTB) method in combination with Green's function (GF) approaches, we address the effect of strain engineering of the transport setup (contact-device(scattering)-contact regions) on the electron and phonon transport properties of two-dimensional materials, focusing on hexagonal boron-nitride (hBN), phosphorene, and MoS
APA:
Sandonas, L.M., Gutierrez, R., Pecchia, A., Seifert, G., & Cuniberti, G. (2017). Tuning quantum electron and phonon transport in two-dimensional materials by strain engineering: A Green's function based study. Physical Chemistry Chemical Physics, 19(2), 1487-1495. https://doi.org/10.1039/c6cp06621f
MLA:
Sandonas, Leonardo Medrano, et al. "Tuning quantum electron and phonon transport in two-dimensional materials by strain engineering: A Green's function based study." Physical Chemistry Chemical Physics 19.2 (2017): 1487-1495.
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