Dianat A, Liao Z, Gall M, Zhang T, Gutierrez R, Zschech E, Cuniberti G (2017)
Publication Type: Journal article
Publication year: 2017
Book Volume: 28
Article Number: 215701
Journal Issue: 21
In this work, we show the doping of graphene most likely from heteroatoms induced by the substrate using Raman spectra, x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy and ab initio molecular dynamics (MD) simulations. The doping of graphene on a highly boron-doped silicon substrate was achieved by an annealing at 400 K for about 3 h in an oven with air flow. With the same annealing, only the Raman features similar to that from the pristine graphene were observed in the freestanding graphene and the graphene on a typical Si/SiO
APA:
Dianat, A., Liao, Z., Gall, M., Zhang, T., Gutierrez, R., Zschech, E., & Cuniberti, G. (2017). Doping of graphene induced by boron/silicon substrate. Nanotechnology, 28(21). https://doi.org/10.1088/1361-6528/aa6ce9
MLA:
Dianat, Arezoo, et al. "Doping of graphene induced by boron/silicon substrate." Nanotechnology 28.21 (2017).
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