Jeon DY, Baldau T, Park SJ, Pregi S, Baraban L, Cuniberti G, Mikolajick T, Weber WM (2017)
Publication Type: Conference contribution
Publication year: 2017
Publisher: Editions Frontieres
Pages Range: 304-307
Conference Proceedings Title: European Solid-State Device Research Conference
Event location: Leuven, BEL
ISBN: 9781509059782
DOI: 10.1109/ESSDERC.2017.8066652
In this paper the operation mechanism of ambipolar Si-nanowire (Si-NW) Schottky-barrier (SB) FETs is discussed in detail using temperature dependent current-voltage (I-V) contour maps. Thermionic and field emission mechanism limited the overall conduction behavior of ambipolar Si-NW SB-FETs with considerable SB-height. However, Si-channel dominant transports with phonon scattering mechanism occur even in the SB based device at a specific bias condition, where charge carrier injection is saturated with a very thinned SB. Temperature dependent transconductance (g
APA:
Jeon, D.Y., Baldau, T., Park, S.J., Pregi, S., Baraban, L., Cuniberti, G.,... Weber, W.M. (2017). In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs. In European Solid-State Device Research Conference (pp. 304-307). Leuven, BEL: Editions Frontieres.
MLA:
Jeon, Dae Young, et al. "In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs." Proceedings of the 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, BEL Editions Frontieres, 2017. 304-307.
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