From devices to circuits: modelling the performance of 5nm nanosheets
Brown AR, Wang L, Asenov P, Kluepfel FJ, Cheng B, Martinie S, Rozeau O, Barraud S, Barbe JC, Millar C, Lorenz JK (2019)
Publication Type: Conference contribution
Publication year: 2019
Publisher: IEEE
City/Town: NEW YORK
Pages Range: 223-226
Conference Proceedings Title: 2019 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2019)
Event location: Udine, ITALY
DOI: 10.1109/sispad.2019.8870357
Involved external institutions
Synopsys, Inc.
United States (USA) (US)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
CEA-Leti (Laboratoire d'electronique des technologies de l'information)
France (FR)
United States (USA) (US)
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Germany (DE)
CEA-Leti (Laboratoire d'electronique des technologies de l'information)
France (FR)
How to cite
APA:
Brown, A.R., Wang, L., Asenov, P., Kluepfel, F.J., Cheng, B., Martinie, S.,... Lorenz, J.K. (2019). From devices to circuits: modelling the performance of 5nm nanosheets. In 2019 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2019) (pp. 223-226). Udine, ITALY: NEW YORK: IEEE.
MLA:
Brown, Andrew R., et al. "From devices to circuits: modelling the performance of 5nm nanosheets." Proceedings of the 24th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, ITALY NEW YORK: IEEE, 2019. 223-226.
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