A Monolithically Integrated SiC Circuit Breaker

Boettcher N, Erlbacher T (2021)

Publication Type: Journal article

Publication year: 2021

Journal

IEEE Electron Device Letters Institute of Electrical and Electronics Engineers (IEEE)

DOI: 10.1109/LED.2021.3102935

Abstract

In this letter, a monolithically integrated SiC circuit breaker device providing self-triggered blocking operation is presented. The proposed topology is implemented into a common 4H-SiC JFET technology, which offers conventional cell design and chip scaling opportunities. Basic operation and design implications are discussed on the basis of quasi-static electrical measurements of fabricated nJFET, pJFET and circuit breaker devices. The design of experiment including a variation of channel length and channel doping dose reveals a distinct effect on the design targets, especially on on-state resistance, trigger current and blocking voltage. The investigated devices exhibit trigger current density levels of up to 2.8 A/cm2 and self-sustained blocking capability up to 795 V DC-link voltage. On-state resistance at room temperature is determined to 0.93 Ωcm2 but drastically decreases at elevated temperatures, as is shown in the experiments.

Related research project(s)

Monolithisch integrierter Überstromschutzschalter basierend auf 4H-SiC JFET Technologie (SiC-DCBreaker) Aug. 1, 2019 - Aug. 1, 2022

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Germany (DE)

How to cite

APA:

Boettcher, N., & Erlbacher, T. (2021). A Monolithically Integrated SiC Circuit Breaker. IEEE Electron Device Letters. https://dx.doi.org/10.1109/LED.2021.3102935

MLA:

Boettcher, Norman, and Tobias Erlbacher. "A Monolithically Integrated SiC Circuit Breaker." IEEE Electron Device Letters (2021).

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