Toumi S, Ouennoughi Z, Weiß R (2021)
Publication Type: Journal article
Publication year: 2021
Book Volume: 127
Article Number: 661
Journal Issue: 9
DOI: 10.1007/s00339-021-04787-0
The temperature dependence of the electrical properties of the Schottky barrier contact W/4H-SiC is studied in term of the Werner’s model assuming a Gaussian distribution of the barrier height to model the inhomogeneity of the Schottky interface. The Gaussian distribution is characterized by the parameters ϕ¯ B as a mean barrier height, ρ2, ρ3 as coefficients quantifying the barrier deformation and σs as a standard deviation. The effect of the series resistance Rs and its relation with the standard deviation σs is also reported. A vertical optimization process is used to extract simultaneously all the parameters cited above as function of temperature from the forward current–voltage (I-V) characteristics at temperatures ranging from 303 to 448 K. The temperature dependence of the characterized parameters of the W/4H-SiC Schottky structure enables us to quantify the inhomogeneity state of the Schottky barrier height prevailing at the MS interface in terms of those extracted parameters.
APA:
Toumi, S., Ouennoughi, Z., & Weiß, R. (2021). Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode. Applied Physics A: Materials Science and Processing, 127(9). https://dx.doi.org/10.1007/s00339-021-04787-0
MLA:
Toumi, S., Z. Ouennoughi, and Roland Weiß. "Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode." Applied Physics A: Materials Science and Processing 127.9 (2021).
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