MBE growth of Ge quantum dot structures in oxide windows
Karmous A, Kirfel O, Oehme M, Kasper E, Schulze J (2009)
Publication Type: Conference contribution
Publication year: 2009
Journal
Book Volume: 6
Conference Proceedings Title: IOP Conference Series: Materials Science and Engineering
Event location: FRA
DOI: 10.1088/1757-899X/6/1/012020
Abstract
The implementation of Quantum Dots (QDs) in devices allows novel electronic and opto-electronic functions. Strain driven Stranski-Krastanov growth mode enables the formation of nanometric islands (on wetting layer) whose density and geometry depend on growth conditions (temperature, rate) and surface structure (cleaning). The island positions are random. However, they can be influenced by surface patterning. In this work, the MBE growth of self-organized Ge QD structures in oxide windows is investigated. The studied Ge QD structures are composed by either a single Ge layer directly grown on a Si substrate, or double layer formed by a Ge QD layer on top of a Si buffer layer. Different surface preparation (dry etching with and without anisotropic wet etching) and cleaning (HF dip or RCA cleaning) schemes have been used. It is found that the cleaning and the Si buffer layer growth have strong influence on island nucleation. Preferred nucleation at the window edge and/or nucleation at the window center is observed under certain conditions. Interestingly, negligible influence (this is needed for most device works) is found only if Ge is grown directly on the RCA cleaned window. © 2009 IOP Publishing Ltd.
Involved external institutions
Germany (DE)How to cite
APA:
Karmous, A., Kirfel, O., Oehme, M., Kasper, E., & Schulze, J. (2009). MBE growth of Ge quantum dot structures in oxide windows. In IOP Conference Series: Materials Science and Engineering. FRA.
MLA:
Karmous, A., et al. "MBE growth of Ge quantum dot structures in oxide windows." Proceedings of the European Materials Research Society (E-MRS) 2009 Spring Meeting, FRA 2009.
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