Ge on Si p-i-n photodiodes for a Bit rate of up to 25 Gbit/s

Klinger S, Grözing M, Zaoui WS, Berroth M, Kaschel M, Oehme M, Kasper E, Schulze J (2009)


Publication Type: Conference contribution

Publication year: 2009

Conference Proceedings Title: European Conference on Optical Communication, ECOC

Event location: AUT

ISBN: 9781424450961

Abstract

Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm. The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Random Bit Sequence (PRBS) length of 2 7-1, the Bit Error Ratio (BER) is smaller than 10 -12. © VDE VERLAG GMBH.

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How to cite

APA:

Klinger, S., Grözing, M., Zaoui, W.S., Berroth, M., Kaschel, M., Oehme, M.,... Schulze, J. (2009). Ge on Si p-i-n photodiodes for a Bit rate of up to 25 Gbit/s. In European Conference on Optical Communication, ECOC. AUT.

MLA:

Klinger, S., et al. "Ge on Si p-i-n photodiodes for a Bit rate of up to 25 Gbit/s." Proceedings of the 35th European Conference on Optical Communication, ECOC 2009, AUT 2009.

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