Antimony doped Si Esaki diodes without post growth annealing

Oehme M, Kirfel O, Werner J, Kaschel M, Kasper E, Schulze J (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Thin Solid Films Elsevier

Book Volume: 518

Pages Range: S65-S67

Journal Issue: 6 SUPPL. 1

DOI: 10.1016/j.tsf.2009.10.057

Abstract

Room temperature current density versus voltage characteristics of silicon Esaki diodes grown with molecular beam epitaxy are presented. The diodes are doped with boron and antimony. The integrated devices are realized without a post growth annealing step. Good peak to valley current ratios in excess of 3 and excellent peak current densities up to 5.2 kA/cm2 were found at room temperature. We present a detailed investigation of the influence on the boron surface segregation effects of the peak current density. © 2009 Elsevier B.V. All rights reserved.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Oehme, M., Kirfel, O., Werner, J., Kaschel, M., Kasper, E., & Schulze, J. (2010). Antimony doped Si Esaki diodes without post growth annealing. Thin Solid Films, 518(6 SUPPL. 1), S65-S67. https://dx.doi.org/10.1016/j.tsf.2009.10.057

MLA:

Oehme, Michael, et al. "Antimony doped Si Esaki diodes without post growth annealing." Thin Solid Films 518.6 SUPPL. 1 (2010): S65-S67.

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