Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe

Werner J, Oehme M, Kasper E, Schulze J (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Thin Solid Films Elsevier

Book Volume: 518

Pages Range: S234-S236

Journal Issue: 6 SUPPL. 1

DOI: 10.1016/j.tsf.2009.10.096

Abstract

The influence of the doping densities to the low temperature mobility of 2DEG in Si/SiGe is investigated. The SiGe modulation doped quantum well structures are realized by the method of molecular beam epitaxy (MBE). Different concepts for the needed virtual substrate are implemented to assess the influence from the quality of the samples to the mobility behavior. The modulation doping is varied between 6 * 1013/cm2 and 3 * 1012/cm2. In contrast to the theory of remote Coulomb scattering, it is observed that the low temperature mobility of two-dimensional electron gas in Si-channels increases with higher doping density. © 2009 Elsevier B.V. All rights reserved.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Werner, J., Oehme, M., Kasper, E., & Schulze, J. (2010). Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe. Thin Solid Films, 518(6 SUPPL. 1), S234-S236. https://dx.doi.org/10.1016/j.tsf.2009.10.096

MLA:

Werner, J., et al. "Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe." Thin Solid Films 518.6 SUPPL. 1 (2010): S234-S236.

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