Germanium on silicon photodetectors with broad spectral range
Oehme M, Kaschel M, Werner J, Kirfel O, Schmid M, Bahouchi B, Kasper E, Schulze J (2010)
Publication Type: Journal article
Publication year: 2010
Journal
Book Volume: 157
Pages Range: H144-H148
Journal Issue: 2
DOI: 10.1149/1.3261854
Abstract
Vertical germanium on silicon p-i-n photodetectors were grown by molecular beam epitaxy and further processed by a quasi-planar mesa process. In this paper the influence of the n+ -top contact layer on the optical responsivity was investigated. The n+ -top contact was realized as highly antimony-doped silicon on a germanium heterostructure. With this additional heterostructure on top (relaxed silicon on relaxed germanium), the optical responsivity of the photodetector was broadened. The visible wavelength cutoff was shifted to 650 nm, whereas the long wavelength cutoff remained at 1550 nm. © 2009 The Electrochemical Society.
Involved external institutions
Germany (DE)How to cite
APA:
Oehme, M., Kaschel, M., Werner, J., Kirfel, O., Schmid, M., Bahouchi, B.,... Schulze, J. (2010). Germanium on silicon photodetectors with broad spectral range. Journal of The Electrochemical Society, 157(2), H144-H148. https://dx.doi.org/10.1149/1.3261854
MLA:
Oehme, Michael, et al. "Germanium on silicon photodetectors with broad spectral range." Journal of The Electrochemical Society 157.2 (2010): H144-H148.
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