Crystalline Ge1-xSnx heterostructures in lateral high-speed devices

Jeschke S, Pfeiffer O, Schulze J, Wilke M (2010)

Publication Type: Conference contribution

Publication year: 2010

Pages Range: 53-58

Conference Proceedings Title: 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010

Event location: ANT

ISBN: 9780769539522

DOI: 10.1109/ICQNM.2010.17

Abstract

This paper describes an approach to manufacture high-speed Germanium MOSFETS with strained channels made from Ge1-xsSnx-alloys while embedding the needed technology process flow into a virtual knowledge management environment based on a virtual nano electrical lab. © 2010 IEEE.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen DE Germany (DE) Universität Stuttgart DE Germany (DE) Technische Universität Berlin DE Germany (DE)

How to cite

APA:

Jeschke, S., Pfeiffer, O., Schulze, J., & Wilke, M. (2010). Crystalline Ge1-xSnx heterostructures in lateral high-speed devices. In 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010 (pp. 53-58). ANT.

MLA:

Jeschke, Sabina, et al. "Crystalline Ge1-xSnx heterostructures in lateral high-speed devices." Proceedings of the 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010, ANT 2010. 53-58.

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