Ge quantum dot tunneling diode with room temperature negative differential resistance

Oehme M, Karmous A, Sarlija M, Werner J, Kasper E, Schulze J (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 97

Article Number: 012101

Journal Issue: 1

DOI: 10.1063/1.3462069

Abstract

We present current density-voltage characteristics of Ge quantum dot p+ -i-n+ tunneling diodes. The diode structure with Ge quantum dots embedded in the intrinsic region was grown by low temperature molecular beam epitaxy without any postgrowth annealing steps. The quantum dot diodes were fabricated using a low thermal budget fabrication process which preserves the Ge quantum structure. A negative differential resistance at room temperature of a Ge quantum dot tunneling diode was observed. A maximum peak to valley ratio of 1.6 at room temperature was achieved. © 2010 American Institute of Physics.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Oehme, M., Karmous, A., Sarlija, M., Werner, J., Kasper, E., & Schulze, J. (2010). Ge quantum dot tunneling diode with room temperature negative differential resistance. Applied Physics Letters, 97(1). https://dx.doi.org/10.1063/1.3462069

MLA:

Oehme, Michael, et al. "Ge quantum dot tunneling diode with room temperature negative differential resistance." Applied Physics Letters 97.1 (2010).

BibTeX: Download