Very high room-temperature peak-to-valley current ratio in Si Esaki tunneling diodes (March 2010)
Oehme M, Sarlija M, Haehnel D, Kaschel M, Werner J, Kasper E, Schulze J (2010)
Publication Type: Journal article
Publication year: 2010
Journal
Book Volume: 57
Pages Range: 2857-2863
Article Number: 5565456
Journal Issue: 11
Abstract
Current densityvoltage characteristics of Si p+-i-n+ Esaki tunneling diodes are presented, which are grown with low-temperature molecular beam epitaxy. The Esaki structures are realized without a postgrowth annealing step. A maximum peak-to-valley current ratio of more than 5 was obtained at room temperature. To the authors' knowledge, this result is the highest reported value for any pure Si tunnel diode. A temperature study of the current densityvoltage characteristics separates all three forward current density components: 1) interband tunneling current density; 2) excess current density through defect-assisted tunneling; and 3) diffusion current density. The results show the high potential for the future development of Si Esaki tunneling diodes and predict an increase of the peak-to-valley current ratio up to 15 if the excess current density is suppressed. © 2010 IEEE.
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Germany (DE)How to cite
APA:
Oehme, M., Sarlija, M., Haehnel, D., Kaschel, M., Werner, J., Kasper, E., & Schulze, J. (2010). Very high room-temperature peak-to-valley current ratio in Si Esaki tunneling diodes (March 2010). IEEE Transactions on Electron Devices, 57(11), 2857-2863. https://doi.org/10.1109/TED.2010.2068395
MLA:
Oehme, Michael, et al. "Very high room-temperature peak-to-valley current ratio in Si Esaki tunneling diodes (March 2010)." IEEE Transactions on Electron Devices 57.11 (2010): 2857-2863.
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