Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si
Arguirov T, Kittler M, Oehme M, Abrosimov NV, Kasper E, Schulze J (2011)
Publication Type: Conference contribution
Publication year: 2011
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 178-179
Pages Range: 25-30
Conference Proceedings Title: Solid State Phenomena
Event location: AUT
ISBN: 9783037852323
DOI: 10.4028/www.scientific.net/SSP.178-179.25
Abstract
We present a novel Ge on Si based LED with unstrained i-Ge active region. The device operates at room temperature and emits photons with energy of 0.8 eV. It basically resembles a p-i-n structure formed on a sub-micrometer thin Ge layer. The Ge layer has been grown on Si substrate by utilizing thin virtual buffer, so it becomes stress free but with high threading dislocation density. We show that such forward biased diode generates strong emission, caused by direct band to band transition in Ge. Using an InSb based detector we were able to analyze the emission spectrum in a broad energy range. We show that at low and moderate currents, features belonging to the direct and the indirect band to band electronic transitions are present which are characteristic for Ge. Clearly dominating is the direct transition related peak. Due to the missing stress-related red shift this peak appears close to the desired communication wave length of 1.55 μm. The dependence of radiation intensity on the excitation current follows a power low with exponent of 1.7, indicating that the recombination rate of the competitive non-radiative processes is relatively low. At high excitation currents features appear in the low energetic part of the spectrum. All results presented here are discussed in view of the outcome from measurements on Ge high quality bulk material. The role of the dislocation in the Ge films is discussed. © (2011) Trans Tech Publications, Switzerland.
Authors with CRIS profile
Involved external institutions
Leibniz-Institut für Kristallzüchtung / Leibniz Institute for Crystal Growth
Germany (DE)
Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics
Germany (DE)
Universität Stuttgart
Germany (DE)
Germany (DE)
Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics
Germany (DE)
Universität Stuttgart
Germany (DE)
How to cite
APA:
Arguirov, T., Kittler, M., Oehme, M., Abrosimov, N.V., Kasper, E., & Schulze, J. (2011). Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si. In Solid State Phenomena (pp. 25-30). AUT: Trans Tech Publications Ltd.
MLA:
Arguirov, Tzanimir, et al. "Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si." Proceedings of the 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011, AUT Trans Tech Publications Ltd, 2011. 25-30.
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