Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

Werner J, Oehme M, Schmid M, Kaschel M, Schirmer A, Kasper E, Schulze J (2011)

Publication Type: Journal article

Publication year: 2011

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 98

Article Number: 061108

Journal Issue: 6

DOI: 10.1063/1.3555439

Abstract

GeSn heterojunction p-i-n diodes with a Sn content of 0.5% are grown with a special low temperature molecular beam epitaxy. The Sn incorporation in Ge is facilitated by a very low temperature growth step in order to suppress Sn surface segregation. Diodes with sharp doping transitions are realized as double mesa structures with a diameter from 1.5 up to 80 μm. An optical responsivity of these GeSn diodes of 0.1 A/W at a wavelength of λ=1.55 μm is measured. In comparison with a pure Ge detector the optical responsivity is increased by factor of 3 as a result of Sn caused band gap reduction. © 2011 American Institute of Physics.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Werner, J., Oehme, M., Schmid, M., Kaschel, M., Schirmer, A., Kasper, E., & Schulze, J. (2011). Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy. Applied Physics Letters, 98(6). https://dx.doi.org/10.1063/1.3555439

MLA:

Werner, J., et al. "Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy." Applied Physics Letters 98.6 (2011).

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