Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells

Kaschel M, Schmid M, Oehme M, Werner J, Schulze J (2011)

Publication Type: Journal article

Publication year: 2011

Journal

Solid-State Electronics Elsevier

Book Volume: 60

Pages Range: 105-111

Journal Issue: 1

DOI: 10.1016/j.sse.2011.01.048

Abstract

In this paper we propose a method for growing fast Germanium pin photodetectors in pre-patterned areas on a Silicon-on-insulator substrate. The layers are deposited by means of molecular beam epitaxy and structured by chemical mechanical polishing. A comparison of the electrical and optical characteristics between a photodetector grown with the proposed method and a reference detector grown on a planar Silicon substrate is made indicating only minor differences. © 2011 Elsevier Ltd. All rights reserved.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Kaschel, M., Schmid, M., Oehme, M., Werner, J., & Schulze, J. (2011). Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells. Solid-State Electronics, 60(1), 105-111. https://dx.doi.org/10.1016/j.sse.2011.01.048

MLA:

Kaschel, M., et al. "Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells." Solid-State Electronics 60.1 (2011): 105-111.

BibTeX: Download