Karmous A, Oehme M, Werner J, Kirfel O, Kasper E, Schulze J (2011)
Publication Type: Journal article
Publication year: 2011
Book Volume: 324
Pages Range: 154-156
Journal Issue: 1
DOI: 10.1016/j.jcrysgro.2011.04.006
Local ultra-thin strained silicon (σSi=1.8GPa) layer on a relaxed SiGe/Si substrate stack has been grown by molecular beam epitaxy in selected spots on the wafer surface defined by patterned windows opened in a SiO
APA:
Karmous, A., Oehme, M., Werner, J., Kirfel, O., Kasper, E., & Schulze, J. (2011). Local strained silicon platform based on differential SiGe/Si epitaxy. Journal of Crystal Growth, 324(1), 154-156. https://dx.doi.org/10.1016/j.jcrysgro.2011.04.006
MLA:
Karmous, A., et al. "Local strained silicon platform based on differential SiGe/Si epitaxy." Journal of Crystal Growth 324.1 (2011): 154-156.
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