Local strained silicon platform based on differential SiGe/Si epitaxy

Karmous A, Oehme M, Werner J, Kirfel O, Kasper E, Schulze J (2011)

Publication Type: Journal article

Publication year: 2011

Journal

Journal of Crystal Growth Elsevier

Book Volume: 324

Pages Range: 154-156

Journal Issue: 1

DOI: 10.1016/j.jcrysgro.2011.04.006

Abstract

Local ultra-thin strained silicon (σSi=1.8GPa) layer on a relaxed SiGe/Si substrate stack has been grown by molecular beam epitaxy in selected spots on the wafer surface defined by patterned windows opened in a SiO2/Si3N4 layer stack. Outside the windows the polycrystalline deposited materials have been removed by chemical mechanical polishing. The strains in the Si and in the SiGe strain relaxed buffer have been investigated using micro-Raman spectroscopy. Based on this growth procedure ultra-thin strained silicon layer on insulator fabrication process is proposed. © 2011 Elsevier B.V.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Karmous, A., Oehme, M., Werner, J., Kirfel, O., Kasper, E., & Schulze, J. (2011). Local strained silicon platform based on differential SiGe/Si epitaxy. Journal of Crystal Growth, 324(1), 154-156. https://dx.doi.org/10.1016/j.jcrysgro.2011.04.006

MLA:

Karmous, A., et al. "Local strained silicon platform based on differential SiGe/Si epitaxy." Journal of Crystal Growth 324.1 (2011): 154-156.

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