Ge quantum dot Schottky diode operated in a 89GHz Rectenna
Karmous A, Xu H, Oehme M, Kasper E, Schulze J (2011)
Publication Type: Conference contribution
Publication year: 2011
Pages Range: 74-76
Conference Proceedings Title: 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Event location: IRL
ISBN: 9781457700903
DOI: 10.1109/ULIS.2011.5758017
Abstract
Schottky diode structures with Ge quantum dots (QDs) have been grown by Molecular Beam Epitaxy (MBE). They have been employed to fabricate NiSi Schottky diodes with Ge dots buried below the metal-semiconductor junctions. These diodes have cut-off frequencies up to 1.1THz (calculated from S-parameter measurements up to 110GHz). Preliminary results demonstrating the implementation of Ge QD Schottky diode in a mm-wave power detection system (RECTENNA) are also presented. © 2011 IEEE.
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Germany (DE)How to cite
APA:
Karmous, A., Xu, H., Oehme, M., Kasper, E., & Schulze, J. (2011). Ge quantum dot Schottky diode operated in a 89GHz Rectenna. In 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 (pp. 74-76). IRL.
MLA:
Karmous, A., et al. "Ge quantum dot Schottky diode operated in a 89GHz Rectenna." Proceedings of the 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011, IRL 2011. 74-76.
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