Germanium vertical Tunneling Field-Effect Transistor

Haehnel D, Oehme M, Sarlija M, Karmous A, Schmid M, Werner J, Kirfel O, Fischer I, Schulze J (2011)

Publication Type: Journal article

Publication year: 2011

Journal

Solid-State Electronics Elsevier

Book Volume: 62

Pages Range: 132-137

Journal Issue: 1

DOI: 10.1016/j.sse.2011.03.011

Abstract

The first realization of a pure Germanium bulk vertical Tunneling Field-Effect Transistor (vTFET) and a high Ion/Ioff ratio for a pure Silicon bulk vTFET are both reported. The manufacturing process, the electrical characteristics and key features and the differences of the two varieties of vTFET devices (pure Germanium bulk vTFET and pure Silicon bulk vTFET) will be discussed in detail. © 2011 Elsevier Ltd. All rights reserved.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Haehnel, D., Oehme, M., Sarlija, M., Karmous, A., Schmid, M., Werner, J.,... Schulze, J. (2011). Germanium vertical Tunneling Field-Effect Transistor. Solid-State Electronics, 62(1), 132-137. https://dx.doi.org/10.1016/j.sse.2011.03.011

MLA:

Haehnel, D., et al. "Germanium vertical Tunneling Field-Effect Transistor." Solid-State Electronics 62.1 (2011): 132-137.

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