Zhou Y, Han W, Chang LT, Xiu F, Wang M, Oehme M, Fischer IA, Schulze J, Kawakami RK, Wang KL (2011)
Publication Type: Journal article
Publication year: 2011
Book Volume: 84
Article Number: 125323
Journal Issue: 12
DOI: 10.1103/PhysRevB.84.125323
We report the first experimental demonstration of electrical spin injection, transport, and detection in bulk germanium (Ge). The nonlocal magnetoresistance (MR) in n-type Ge is observable up to 225 K. Our results indicate that the spin relaxation rate in the n-type Ge is closely related to the momentum scattering rate, which is consistent with the predicted Elliot-Yafet spin relaxation mechanism for Ge. The bias dependence of the nonlocal MR and the spin lifetime in n-type Ge is also investigated. © 2011 American Physical Society.
APA:
Zhou, Y., Han, W., Chang, L.-T., Xiu, F., Wang, M., Oehme, M.,... Wang, K.L. (2011). Electrical spin injection and transport in germanium. Physical Review B - Condensed Matter and Materials Physics, 84(12). https://doi.org/10.1103/PhysRevB.84.125323
MLA:
Zhou, Yi, et al. "Electrical spin injection and transport in germanium." Physical Review B - Condensed Matter and Materials Physics 84.12 (2011).
BibTeX: Download