Room-temperature electroluminescence from GeSn light-emitting pin diodes on Si

Oehme M, Werner J, Gollhofer M, Schmid M, Kaschel M, Kasper E, Schulze J (2011)

Publication Type: Journal article

Publication year: 2011

Journal

IEEE Photonics Technology Letters Institute of Electrical and Electronics Engineers (IEEE)

Book Volume: 23

Pages Range: 1751-1753

Article Number: 6025261

Journal Issue: 23

DOI: 10.1109/LPT.2011.2169052

Abstract

In this letter, a GeSn light-emitting pin diode integrated on Si via a Ge buffer is demonstrated and it is compared with a light-emitting pin diode made from pure, unstrained Ge on Si. The diode layer structures are grown with a special low-temperature molecular beam epitaxy process. The pseudomorphic GeSn layers (1.1% Sn content) on the Ge buffer are compressively strained. Both light-emitting pin diodes clearly show direct bandgap electroluminescence emission at room temperature. The electroluminescence peak of the GeSn light-emitting pin diode is shifted by 20 meV into the infrared region compared to the electroluminescence peak of the unstrained Ge light-emitting pin diode. The shift is due to the lower bandgap of GeSn and the influence of strain. © 2011 IEEE.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Oehme, M., Werner, J., Gollhofer, M., Schmid, M., Kaschel, M., Kasper, E., & Schulze, J. (2011). Room-temperature electroluminescence from GeSn light-emitting pin diodes on Si. IEEE Photonics Technology Letters, 23(23), 1751-1753. https://dx.doi.org/10.1109/LPT.2011.2169052

MLA:

Oehme, Michael, et al. "Room-temperature electroluminescence from GeSn light-emitting pin diodes on Si." IEEE Photonics Technology Letters 23.23 (2011): 1751-1753.

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