Approaches for III/V photonics on Si

Wiesner M, Schulz WM, Angelopoulos EA, Burghartz JN, Werner J, Oehme M, Schulze J, Rossbach R, Jetter M, Michler P (2011)

Publication Type: Conference contribution

Publication year: 2011

Journal

AIP Conference Proceedings AIP Publishing

Book Volume: 1399

Pages Range: 261-262

Conference Proceedings Title: AIP Conference Proceedings

ISBN: 9780735410022

DOI: 10.1063/1.3666354

Abstract

We investigated different approaches to overcome difficulties in III/V-on-Si heteroepitaxy, namely growth on compliant substrates and virtual Ge substrates, both realized on top of Si substrates, and in addition, directly on Si. The prospect of this work was the realization of a light emitter on standard Si(100) substrate, capable of being integrated in established industrial processes. © 2011 American Institute of Physics.

Involved external institutions

Institut für Mikroelektronik Stuttgart (IMS CHIPS) DE Germany (DE) Universität Stuttgart DE Germany (DE)

How to cite

APA:

Wiesner, M., Schulz, W.-M., Angelopoulos, E.A., Burghartz, J.N., Werner, J., Oehme, M.,... Michler, P. (2011). Approaches for III/V photonics on Si. In AIP Conference Proceedings (pp. 261-262).

MLA:

Wiesner, Mark, et al. "Approaches for III/V photonics on Si." Proceedings of the 30th International Conference on the Physics of Semiconductors, ICPS-30 2011. 261-262.

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