Recent developments in Ge dots grown on pit-patterned surfaces
Karmous A, Fischer IA, Kirfel O, Mattes J, Oehme M, Werner J, Schulze J (2012)
Publication Type: Journal article
Publication year: 2012
Journal
Book Volume: 249
Pages Range: 764-772
Journal Issue: 4
Abstract
Carrier confinement in Ge dots in a Si matrix has a large influence on electronic and optical properties. These dots, therefore, continue to be of interest for potential device applications. For this, the control over dot geometry, position, composition, and strain is a necessary prerequisite. Ge dots that are deposited on substrates with previously defined nucleation sites, as obtained by a patterning of the substrate, have been at the focus of a number of experimental investigations these last years, precisely because they seem to be suited for incorporation into electronic and optical devices. We review recent results in this research area that are e.g., concerned with analysing the influence of the available patterning and growth parameters on the dots and give an overview of recent developments in device applications. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Karmous, A., Fischer, I.A., Kirfel, O., Mattes, J., Oehme, M., Werner, J., & Schulze, J. (2012). Recent developments in Ge dots grown on pit-patterned surfaces. physica status solidi (b), 249(4), 764-772. https://doi.org/10.1002/pssb.201100779
MLA:
Karmous, Alim, et al. "Recent developments in Ge dots grown on pit-patterned surfaces." physica status solidi (b) 249.4 (2012): 764-772.
BibTeX: Download