Laser assisted formation of binary and ternary Ge/Si/Sn alloys

Stefanov S, Conde JC, Benedetti A, Serra C, Werner J, Oehme M, Schulze J, Chiussi S (2012)

Publication Type: Journal article

Publication year: 2012

Journal

Thin Solid Films Elsevier

Book Volume: 520

Pages Range: 3262-3265

Journal Issue: 8

DOI: 10.1016/j.tsf.2011.10.101

Abstract

Binary and ternary Si/Ge/Sn alloys were epitaxially grown on virtual Germanium buffer layers using pulsed laser induced epitaxy with a 193 nm Excimer laser source. The role of the processing parameters on the intermixing of the components (Sn, Ge and Si) has been studied. Characterization of the resulting Ge 1 - xSn x and Si 1 - y - xGe ySn x alloys yield up to 1% Sn concentration in substitutional sites of the Ge or SiGe matrix. © 2011 Elsevier B.V. All rights reserved.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

University of Vigo / Universidade de Vigo ES Spain (ES) Universität Stuttgart DE Germany (DE)

How to cite

APA:

Stefanov, S., Conde, J.C., Benedetti, A., Serra, C., Werner, J., Oehme, M.,... Chiussi, S. (2012). Laser assisted formation of binary and ternary Ge/Si/Sn alloys. Thin Solid Films, 520(8), 3262-3265. https://doi.org/10.1016/j.tsf.2011.10.101

MLA:

Stefanov, S., et al. "Laser assisted formation of binary and ternary Ge/Si/Sn alloys." Thin Solid Films 520.8 (2012): 3262-3265.

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