Silicon germanium tin alloys formed by pulsed laser induced epitaxy

Stefanov S, Conde JC, Benedetti A, Serra C, Werner J, Oehme M, Schulze J, Buca D, Hollaender B, Mantl S, Chiussi S (2012)

Publication Type: Journal article

Publication year: 2012

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 100

Article Number: 204102

Journal Issue: 20

DOI: 10.1063/1.4714768

Abstract

Pulsed lased induced epitaxy is used to obtain heteroepitaxial Ge 1-xSn x and Si 1-x-yGe xSn y alloys with graded composition on Si(001) substrates. The transition from Ge 1-xSn x to Si 1-x-yGe xSn y was achieved by varying the number of laser pulses accordingly with the level of intermixing between Si, Ge, and Sn. Melt duration, predicted by numerical methods, is experimentally confirmed by "in-situ" reflectivity measurements and relates, like the end reflectivity value, to the level of intermixing. The possibility to adjust concentration profiles through laser processing of Sn films on virtual germanium buffer layers for lattice engineering of Ge 1-xSn x and Si 1-x-yGe xSn y alloys on silicon substrates is demonstrated. © 2012 American Institute of Physics.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Forschungszentrum Jülich / Research Centre Jülich (FZJ) DE Germany (DE) University of Vigo / Universidade de Vigo ES Spain (ES) Universität Stuttgart DE Germany (DE)

How to cite

APA:

Stefanov, S., Conde, J.C., Benedetti, A., Serra, C., Werner, J., Oehme, M.,... Chiussi, S. (2012). Silicon germanium tin alloys formed by pulsed laser induced epitaxy. Applied Physics Letters, 100(20). https://doi.org/10.1063/1.4714768

MLA:

Stefanov, S., et al. "Silicon germanium tin alloys formed by pulsed laser induced epitaxy." Applied Physics Letters 100.20 (2012).

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